CDBJFSC10650-G datasheet(2/3 Pages) COMCHIP

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Electrical Characteristics (at TA=25°C unless otherwise noted)

Parameter

Conditions

Symbol

Typ

Max

Unit

Typical Characteristics (

)

CDBJFSC10650-G

Page 2

Total capacitance

Total capacitive charge

Forward voltage

VR = 0V , TJ = 25°C , f = 1 MHZ

µA

VR = 400V , TJ = 150°C

1.7

100

IF = 10 A , TJ = 25°C

IF = 10 A , TJ = 175°C

VR = 650V , TJ = 25°C

VR = 650V , TJ = 175°C

VR = 200V , TJ = 25°C , f = 1 MHZ

1.48

Fig.4 - Capacitance vs. Reverse Voltage

Reverse current

QC = ∫

C(V) dv

1.7

710

QW-BSC13

REV:A

Comchip Technology CO., LTD.

Company reserves the right to improve product design , functions and reliability without notice.

Case Tempature, TC (°C)

Fig.3 - Current Derating

175

Fig.1 - Forward Characteristics

Forward Voltage, VF (V)

2.0

1.5

2.5

1.0

0.5

TJ=75°C

TJ=125°C

TJ=25°C

T=175°C

Fig.2 - Reverse Characteristics

Reverse Voltage, VR (V)

0.032

0.088

200

400

800

0.040

0.056

100

300

600

500

700

0.008

0.048

0.064

0.016

0.024

0.080

0.072

T=175°C

T=125°C

TJ=25°C

TJ=75°C

Reverse Voltage, VR (V)

100

200

250

750

400

0.01

0.1

100

1000

150

300

350

450

500

550

600

650

700

150

125

100

10% Duty

30% Duty

50% Duty

70% Duty

D.C.

Silicon Carbide Power Schottky Diode

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