BCF020T datasheet(2/6 Pages) BEREX

2 / 6 page

www.berex.com

BeRex, Inc. 3350 Scot Blvd. #61-01 Santa Clara, CA 95054 tel. (408) 452-5595

January 2015

Specifications are subject to change without notice. ©BeRex 2015

Rev. 1.3

BCF020T

ELECTRICAL CHARACTERISTIC (Vds = 8V, Ta = 25° C)

PARAMETER/TEST CONDITIONS

TEST

FREQUENCY

MINIMUM

TYPICAL

MAXIMUM

UNIT

P1dB Output Power @ P

1dB

(Vds = 8V, Ids = 50%

Idss)

12 GHZ

18 GHz

18.0

18.2

20.0

20.2

dBm

G1dB Gain @ P1dB (Vds = 8V, Ids = 50% Idss)

12 GHZ

18 GHz

11.5

9.2

13.5

12.1

PAE PAE @ P1dB (Vds = 8V, Ids = 50% Idss)

12 GHZ

18 GHz

Noise figure (Vds = 2V, Ids = 10 mA)

12 GHz

1.1

Associated Gain ((Vds = 2V, Ids = 10 mA)

12 GHz

ELECTRICAL CHARACTERISTIC (Vds = 6V, Ta = 25° C)

PARAMETER/TEST CONDITIONS

TEST

FREQUENCY

MINIMUM

TYPICAL

MAXIMUM

UNIT

P1dB Output Power @ P1dB (Vds = 6V, Ids = 50%

Idss)

12 GHZ

18 GHz

17.2

17.6

19.2

19.6

dBm

G1dB Gain @ P1dB (Vds = 6V, Ids = 50% Idss)

12 GHZ

18 GHz

11.2

9.8

13.2

11.8

PAE PAE @ P1dB (Vds = 6V, Ids = 50% Idss)

12 GHZ

18 GHz

Noise figure (Vds = 2V, Ids = 10 mA)

12 GHz

1.1

Associated Gain ((Vds = 2V, Ids = 10 mA)

12 GHz

MAXIMUM RATINGS (Ta = 25° C)

PARAMETERS

ABSOLUTE

CONTINUOUS

Vds

Vgs

Ids

Igsf

Tch

Tstg

Drain-Source Voltage

Gate-Source Voltage

Drain Current

Forward Gate Current

Input Power

Channel Temperature

Storage Temperature

Total Power Dissipation

12 V

-8 V

Idss

5 mA

15 dBm

175° C

-60° C - 150° C

0.9 W

8 V

-4V

Idss

0.8 mA

@ 3dB compression

150° C

-60° C - 150° C

0.8 W

Exceeding any of the above Maximum Ratings will result in reduced MTTF and may cause permanent damage to the device.

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