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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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IPU07N03LA 데이터시트(PDF) 1 Page - Infineon Technologies AG |
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IPU07N03LA 데이터시트(HTML) 1 Page - Infineon Technologies AG |
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1 / 9 page  IPU07N03LA OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C operating temperature • dv /dt rated Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T C=25 °C 1) 30 A T C=100 °C 30 Pulsed drain current I D,pulse T C=25 °C 2) 210 Avalanche energy, single pulse E AS I D=30 A, R GS=25 Ω 375 mJ Reverse diode dv /dt dv /dt I D=30 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C 6 kV/µs Gate source voltage 3) V GS ±20 V Power dissipation P tot T C=25 °C 83 W Operating and storage temperature T j, T stg -55 ... 175 °C IEC climatic category; DIN IEC 68-1 55/175/56 Value V DS 25 V R DS(on),max 6.5 m Ω I D 30 A Product Summary P-TO252-3-11 Type Package Ordering Code Marking IPU07N03LA P-TO251-3-1 Q67042-S4150 07N03LA P-TO251-3-1 Rev. 1.1 page 1 2003-02-06 |
유사한 부품 번호 - IPU07N03LA |
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유사한 설명 - IPU07N03LA |
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