4

ATR0797

4665D–SIGE–08/04

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating

only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this

specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

All voltages are referred to GND.

Parameters

Symbol

Value

Unit

Supply voltage

V

CC

5.5

V

LO input

LOP, LON

10

dBm

IF input

IFN, IFP

10

V

Operating temperature

T

OP

-40 to +85

°C

Storage temperature

T

stg

-65 to +150

°C

Note:

The device may not survive all maximums applied simultaneously.

Thermal Resistance

Parameters

Symbol

Value

Unit

Junction ambient

R

thJA

35

K/W

Electrical Characteristics

Test conditions: V

IF input: at 200.1 MHz, GC1 = 0, GC2 = 0; 0 dBm

IF input: at 200.1 MHz, GC1 = 1, GC2 = 0; -20 dBm

IF input: at 200.1 MHz, GC1 = 1, GC2 = 1; -40 dBm

No.

Parameters

Test Conditions

Pin

Symbol

Min.

Typ.

Max.

Unit

Type

(1)

1

IF Input (I/Q Mixing to Baseband)

1.1

Frequency range

8-9

f

65

120 -

220

300

MHz

B

1.2

IF input return loss

50

Ω nominal

differential input

(2)

8-9

RL

20

dB

D

1.3

IF input common

mode voltage

Internally generated

8, 9

V

CH

2V

1.4

Gain

Gain set = high;

GC1 = GC2 = 1

2-1,

16-15

G32

35

38

dB

A

1.5

Input P1dB

1, 2,

15, 16

P1dB

-29

-27

dBm

C

1.6

DSB Noise figure

2-1,

16-15

NF

11

dB

D

1.7

Gain

Gain set = medium;

GC1 = 1; GC2 = 0 or

GC1 = 0; GC2 = 1

2-1,

16-15

G12

15

17

dB

A

1.8

Input P1dB

1, 2,

15, 16

P1dB

-8

-6

dBm

C

1.9

DSB Noise figure

2-1,

16-15

NF

14.5

dB

D

Notes:

1. Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter

2. The parasitic inductance of the package, the board, and L5, L6 must be matched out at the center frequency with a series

capacitor to achieve 20 dB of port match.

3. The parasitic inductance of the package must be matched out to reach 20 dB port match above 100 MHz.