GC01MPS12-252 datasheet(1/7 Pages) GENESIC

부품명	GC01MPS12-252

상세설명	Silicon Carbide Power Schottky Diode

PDF	7 Pages

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제조업체	GENESIC [GeneSiC Semiconductor, Inc.]

홈페이지	http://www.genesicsemi.com/

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GC01MPS12-252

1200 V SiC MPS™ Diode

Feb 2018 Rev1.1

http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/

Silicon Carbide Power

Schottky Diode

Features

 High Avalanche (UIS) Capability

 Enhanced Surge Current Capability

 175 °C Maximum Operating Temperature

 Temperature Independent Switching Behavior

 Positive Temperature Coefficient Of VF

 Extremely Fast Switching Speeds

 Superior Figure of Merit QC/IF

Advantages

 Low Standby Power Losses

 Improved Circuit Efficiency (Lower Overall Cost)

 Low Switching Losses

 Ease of Paralleling Devices without Thermal Runaway

 Smaller Heat Sink Requirements

 Low Reverse Recovery Current

 Low Device Capacitance

 Low Reverse Leakage Current at Operating Temperature

Absolute Maximum Ratings

Parameter

Repetitive Peak Reverse Voltage

Continuous Forward Current

Non-Repetitive Peak Forward Surge Current,

Half Sine Wave

Repetitive Peak Forward Surge Current, Half

Sine Wave

Non-Repetitive Peak Forward Surge Current

I

2t Value

Non-Repetitive Avalanche Energy

Diode Ruggedness

Power Dissipation

Operating and Storage Temperature

Electrical Characteristics

Parameter

Diode Forward Voltage

Reverse Current

Total Capacitive Charge

Switching Time

Total Capacitance

Thermal / Mechanical Characteristics

Thermal Resistance, Junction - Case

http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/

Package

TO-252-2L

Applications

Overall Cost)

ithout Thermal Runaway

t Operating Temperature

 Power Factor Correction (PFC)

 Switched-Mode Power Supply (SMPS)

 Solar Inverters

 Wind Turbine Inverters

 Motor Drives

 Induction Heating

 Uninterruptible Power Supply (UPS)

 High Voltage Multipliers

Symbol

Conditions

Values

VRRM

1200

IF

TC = 25 °C, D = 1

6

TC = 135 °C, D = 1

3

TC = 170 °C, D = 1

1

IF,SM

TC = 25 °C, tP = 10 ms

10

TC = 150 °C, tP = 10 ms

8

IF,RM

TC = 25 °C, tP = 10 ms

6

TC = 150 °C, tP = 10 ms

3

IF,max

TC = 25 °C, tP = 10 µs

65

∫i

2 dt

TC = 25 °C, tP = 10 ms

0.9

EAS

L = 60 mH, IAV = 1 A, VDD = 60 V

20

dV/dt

VR = 0 ~ 960 V

100

Ptot

TC = 25 °C

66

Tj , Tstg

-55 to 175

Symbol

Conditions

Values

min.

typ.

VF

IF = 1 A, Tj = 25 °C

1.5

IF = 1 A, Tj = 175 °C

2.3

IR

VR = 1200 V, Tj = 25 °C

0.1

VR = 1200 V, Tj = 175 °C

0.8

QC

IF ≤ IF,MAX

dIF/dt = 200 A/μs

Tj = 175 °C

VR = 400 V

4.5

VR = 800 V

6

ts

VR = 400 V

< 10

VR = 800 V

C

VR = 1 V, f = 1 MHz, Tj = 25 °C

68

VR = 800 V, f = 1 MHz, Tj = 25 °C

4.5

RthJC

2.3

VRRM

IF (Tc = 13

QC

case

1

2

http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/

Page 1 of 6

Mode Power Supply (SMPS)

Values

Unit

1200

V

A

2s

mJ

V/µs

W

55 to 175

°C

Values

Unit

max.

1.8

V

2.7

1

µA

9

nC

ns

pF

°C/W

=

1200 V

35°C)

=

3 A

=

6 nC

유사한 부품 번호 - GC01MPS12-252

제조업체	부품명	데이터시트	상세설명
GeneSiC Semiconductor, ...	GC01MPS12-214	2Mb / 7P	Silicon Carbide Power Schottky Diode

More results

유사한 설명 - GC01MPS12-252

제조업체	부품명	데이터시트	상세설명
List of Unclassifed Man...	GB01SLT12-252	336Kb / 4P	Silicon Carbide Power Schottky Diode
GeneSiC Semiconductor, ...	GB05SLT12-220	399Kb / 5P	Silicon Carbide Power Schottky Diode
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Comchip Technology	CDBDSC5650-G	91Kb / 2P	Silicon Carbide Power Schottky Diode
	CDBJFSC5650-G	113Kb / 3P	Silicon Carbide Power Schottky Diode
	CDBJSC101200-G	114Kb / 3P	Silicon Carbide Power Schottky Diode
GeneSiC Semiconductor, ...	GB2X40MPS12-227	2Mb / 7P	Silicon Carbide Power Schottky Diode
GeneSiC Semiconductor, ...	GC2X20MPS12-247	2Mb / 7P	Silicon Carbide Power Schottky Diode
Cree, Inc	E4D20120G	2Mb / 6P	Silicon Carbide Schottky Diode Silicon Carbide Schottky Diode

More results

GC01MPS12-252 데이터시트(PDF) 1 Page - GeneSiC Semiconductor, Inc.

GC01MPS12-252 데이터시트(HTML) 1 Page - GeneSiC Semiconductor, Inc.

유사한 부품 번호 - GC01MPS12-252

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