HCS9018 datasheet(1/4 Pages) HOTTECH

부품명	HCS9018

상세설명	GENERAL PURPOSE TRANSISTOR

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HCS9018(NPN)

GENERAL PURPOSE TRANSISTOR

REPLACEMENT TYPE :S9018

FEATURES



High Current Gain Bandwidth Product

MAXIMUM RATINGS (TA=25°C unless otherwise noted)

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

Parameter

Symbol Test conditions

Min

Typ

Max

Unit

Collector-Base Breakdown Voltage

VCBO

IC=100uA, IE=0

25

V

Collector-Emitter Breakdown Voltage

VCEO

IC=0.1mA, IB=0

18

V

Emitter-Base Breakdown Voltage

VEBO

IE=100A , IC=0

4

V

Collector Cut-off Current

ICBO

VCB=20V , IE=0

0.1

nA

Collector Cut-off Current

ICEO

VCE=15V,IB=0

0.1

μA

Emitter Cut-off Current

IEBO

VEB=3V , IC=0

0.1

μA

DC Current Gainss

hFE(1)

VCE=5V , IC=1mA

28

270

Collector-Emitter Saturation Voltage

VCE(sat)

IC=10mA , IB=1mA

0.5

V

Base-Emitter Saturation Voltage

VBE(sat)

IC=10mA , IB=1mA

1.42

V

Transition Frequency

fT

VCE=5V,IC=50mA,f=400MHz

800

MHz

CLASSIFICATION OF hFE

Rank

D

E

F

G

H

I

J

Range

28-45

39-60

54-80

72-108

97-146

132-198

180-270

Parameter

Symbol

Value

Unit

Collector-Base Voltage

VCBO

25

V

Collector-Emitter Voltage

VCEO

18

V

Emitter-Base Voltage

VEBO

4

V

Collector Current-Continuous

IC

0.05

A

Collector Power Dissipation

PD

400

mW

Junction Temperature

TJ

150

°C

Thermal Resistance Junction to Ambient

RӨJA

312.5

°C/W

Storage Temperature

Tstg

-55~+150

°C

TO-92

1:EMITTER

2:BASE 3:COLLECTOR

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