HCSA708 datasheet(1/4 Pages) HOTTECH

부품명	HCSA708

상세설명	GENERAL PURPOSE TRANSISTOR

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HCSA708(PNP)

GENERAL PURPOSE TRANSISTOR

REPLACEMENT TYPE : KSA708

FEATURES



Low Saturation Medium Current Application

MAXIMUM RATINGS (TA=25°C unless otherwise noted)

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

Parameter

Symbol Test conditions

Min

Typ

Max

Unit

Collector-Base Breakdown Voltage

VCBO

IC=-0.1mA, IE=0

-80

V

Collector-Emitter Breakdown Voltage

VCEO

IC=-10mA, IB=0

-60

V

Emitter-Base Breakdown Voltage

VEBO

IE=-0.1mA , IC=0

-8

V

Collector Cut-off Current

ICBO

VCB=-60V , IE=0

-0.1

μA

Emitter Cut-off Current

IEBO

VEB=-5V , IC=0

-0.1

μA

DC Current Gain

hFE(1)

VCE=-2V , IC=-50mA

40

240

Collector-Emitter Saturation Voltage

VCE(sat)

IC=-500mA , IB=-50mA

-0.7

V

Base-Emitter Saturation Voltage

VBE(sat)

IC=--500mA , IB=-50mA

-1.1

V

Collector Output Capacitance

COB

VCB=-10V,IE=0, f=1MHz

13

pF

Transition Frequency

fT

VCE=-10V , IC=-50mA

50

MHz

CLASSIFICATION OF hFE

Rank

R

O

Y

Range

40-80

70-140

120-150

Parameter

Symbol

Value

Unit

Collector-Base Voltage

VCBO

-80

V

Collector-Emitter Voltage

VCEO

-60

V

Emitter-Base Voltage

VEBO

-8

V

Collector Current-Continuous

IC

-700

mA

Collector Power Dissipation

PD

800

mW

Thermal Resistance From Junction to Ambient

RθJA

156.2

°C/W

Junction Temperature

TJ

150

°C

Storage Temperature

Tstg

-55~+150

°C

TO-92

1:EMITTER

2:BASE 3:COLLECTOR

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