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STF12PF06 데이터시트(PDF) 1 Page - STMicroelectronics |
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STF12PF06 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 10 page ![]() 1/10 March 2005 STP12PF06 STF12PF06 P-CHANNEL 60V - 0.18 Ω - 12A TO-220/TO-220FP STripFET™ II POWER MOSFET Rev. 2.0 Figure 1:Package Table 1: General Features ■ TYPICAL RDS(on) = 0.18 Ω ■ EXCEPTIONAL dv/dt CAPABILITY ■ 100% AVALANCHE TESTED ■ LOW GATE CHARGE ■ APPLICATION ORIENTED CHARACTERIZATION DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility APPLICATIONS ■ MOTOR CONTROL ■ DC-DC & DC-AC CONVERTERS TYPE VDSS RDS(on) ID STP12PF06 STF12PF06 60 V 60 V < 0.20 Ω < 0.20 Ω 12 A 12 A 1 2 3 1 2 3 TO-220 TO-220FP Figure 2: Internal Schematic Diagram Table 2: Order Codes Table 3: ABSOLUTE MAXIMUM RATINGS ( •) Pulse width limited by safe operating area. NOTE :For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed. (1) ISD ≤12A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX (2) Starting Tj = 25 oC, ID = 12A, VDD= 25V PART NUMBER MARKING PACKAGE PACKAGING STP12PF06 STF12PF06 P12PF06 F12PF06 TO-220 TO-220FP TUBE TUBE Symbol Parameter Value Unit STP20PF06 STF20PF06 VDS Drain-source Voltage (VGS = 0) 60 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 60 V VGS Gate- source Voltage ± 20 V ID Drain Current (continuous) at TC = 25°C 12 8 A ID Drain Current (continuous) at TC = 100°C 8.4 5.6 A IDM(•) Drain Current (pulsed) 48 32 A Ptot Total Dissipation at TC = 25°C 60 225 W Derating Factor 0.4 0.17 W/°C dv/dt (1) Peak Diode Recovery voltage slope 6 V/ns EAS (2) Single Pulse Avalanche Energy 200 mJ Tstg Storage Temperature -55 to 175 °C Tj Operating Junction Temperature |
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