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ISL9014IRBCZ 데이터시트(PDF) 4 Page - Renesas Technology Corp

부품명 ISL9014IRBCZ
상세설명  Dual LDO with Low Noise, Low IQ and High PSRR
PDF  11 Pages
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제조업체  RENESAS [Renesas Technology Corp]
홈페이지  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

ISL9014IRBCZ 데이터시트(HTML) 4 Page - Renesas Technology Corp

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ISL9014
FN9245 Rev 3.00
Page 4 of 11
March 11, 2008
Output Noise Voltage
IO = 100µA, VO = 1.5V, TA = +25°C, CBYP = 0.1µF
BW = 10Hz to 100kHz
30
µVRMS
DEVICE START-UP CHARACTERISTICS
Device Enable Time
tEN
Time from assertion of the ENx pin to when the output voltage
reaches 95% of the VO(nom)
250
500
µs
LDO Soft-Start Ramp Rate
tSSR
Slope of linear portion of LDO output voltage ramp during
start-up
30
60
µs/V
EN1, EN2 PIN CHARACTERISTICS
Input Low Voltage
VIL
-0.3
0.5
V
Input High Voltage
VIH
1.4
VIN + 0.3
V
Input Leakage Current
IIL, IIH
0.1
µA
Pin Capacitance
CPIN
Informative
5
pF
NOTES:
6. VOx = 0.98*VOx(NOM); Valid for VOx greater than 1.85V.
7. Parts are 100% tested at +25°C. Temperature limits established by characterization and are not production tested.
Electrical Specifications
Unless otherwise noted, all parameters are guaranteed over the operational supply voltage and temperature
range of the device as follows:
TA = -40°C to +85°C; VIN = (VO + 1.0V) to 6.5V with a minimum VIN of 2.3V; CIN = 1µF; CO = 1µF;
CBYP = 0.01µF. (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
(Note 7) TYP
MAX
(Note 7) UNITS



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