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STT818A 데이터시트(PDF) 1 Page - STMicroelectronics |
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STT818A 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 6 page ![]() STT818A HIGH GAIN LOW VOLTAGE PNP POWER TRANSISTOR s VERY LOW SATURATION VOLTAGE s DC CURRENT GAIN > 100 (hFE) s 3 A CONTINUOUS COLLECTOR CURRENT (IC) s SURFACE-MOUNTING SOT23-6L PACKAGE IN TAPE & REEL APPLICATIONS s POWER MANAGEMENT IN PORTABLE EQUIPMENTS s SWITCHING REGULATOR IN BATTERY CHARGER APPLICATIONS DESCRIPTION Using the latest low voltage Epitaxial Planar technology based on interdigitated layout, STMicroelectronics has introduced the new “High Gain” Power bipolar transistor family, with outstanding performances. Its very low saturation voltage combined with the “high gain” characteristics make it ideal for all high efficiency low voltage switching applications. Marking : 818A ® INTERNAL SCHEMATIC DIAGRAM February 2001 SOT23-6L (TSOP6) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Val ue Uni t VCBO Collector-Base Voltage (IE =0) -30 V VCEO Collector-Emit ter Voltage (IB =0) -30 V VEBO Emitter-Base Voltage (IC =0) -5 V IC Collector Current -3 A ICM Collector Peak Current -6 A IB Base Current -0. 2 A IBM Base Peak Current -0. 5 A Ptot Tot al Dissipation at TC =25 oC1.2 W Tstg Storage Temperature -65 to 150 oC Tj Max. O perat ing Junction Temperature 150 oC 1/6 |
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