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S85B 데이터시트(PDF) 1 Page - GeneSiC Semiconductor, Inc.

부품명 S85B
상세설명  Silicon Standard Recovery Diode
PDF  3 Pages
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제조업체  GENESIC [GeneSiC Semiconductor, Inc.]
홈페이지  http://www.genesicsemi.com/
Logo GENESIC - GeneSiC Semiconductor, Inc.

S85B 데이터시트(HTML) 1 Page - GeneSiC Semiconductor, Inc.

  S85B_16 Datasheet HTML 1Page - GeneSiC Semiconductor, Inc. S85B_16 Datasheet HTML 2Page - GeneSiC Semiconductor, Inc. S85B_16 Datasheet HTML 3Page - GeneSiC Semiconductor, Inc.  
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VRRM = 100 V - 600 V
IF =85 A
Features
• High Surge Capability
DO-5 Package
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
3. Stud is base.
Parameter
Symbol
S85B (R)
S85D (R)
Unit
Repetitive peak reverse voltage
VRRM
100
200
V
• Types from 100 V to 600 V VRRM
2. Reverse polarity (R): Stud is anode.
S85B thru S85JR
S85J (R)
400
S85G (R)
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Silicon Standard
Recovery Diode
Conditions
600
pp
g
RMS reverse voltage
VRMS
70
140
V
DC blocking voltage
VDC
100
200
V
Continuous forward current
IF
85
85
A
Operating temperature
Tj
-55 to 150
-55 to 150
°C
Storage temperature
Tstg
-55 to 150
-55 to 150
°C
Parameter
Symbol
S85B (R)
S85D (R)
Unit
Diode forward voltage
1.1
1.1
10
10
μA
15
15
mA
Thermal characteristics
Thermal resistance, junction -
case
RthJC
0.65
0.65
°C/W
15
A
1800
Reverse current
IR
VF
1800
S85J (R)
10
10
VR = 100 V, Tj = 25 °C
IF = 85 A, Tj = 25 °C
TC ≤ 140 °C
Conditions
280
1800
1800
-55 to 150
85
85
-55 to 150
0.65
1.1
1.1
9
IF,SM
S85G (R)
0.65
VR = 100 V, Tj = 180 °C
V
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
-55 to 150
-55 to 150
TC = 25 °C, tp = 8.3 ms
420
600
400
Surge non-repetitive forward
current, Half Sine Wave
Feb 2016
Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
1


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