S150M datasheet(1/3 Pages) GENESIC

부품명	S150M

상세설명	Silicon Standard Recovery Diode

PDF	3 Pages

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제조업체	GENESIC [GeneSiC Semiconductor, Inc.]

홈페이지	http://www.genesicsemi.com/

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1 / 3 page

VRRM = 600 V - 1200 V

IF =150 A

Features

• High Surge Capability

DO-8 Package

• Not ESD Sensitive

Note:

1. Standard polarity: Stud is cathode.

3. Stud is base.

Parameter

Symbol

S150J (R)

S150K (R)

Unit

Repetitive peak reverse voltage

VRRM

600

800

V

• Types from 600 V to 1200 V VRRM

Silicon Standard

Recovery Diode

Conditions

1200

S150J thru S150QR

S150Q (R)

1000

S150M (R)

Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)

2. Reverse polarity (R): Stud is anode.

pp

g

RMS reverse voltage

VRMS

420

560

V

DC blocking voltage

VDC

600

800

V

Continuous forward current

IF

150

A

Operating temperature

Tj

-55 to 150

°C

Storage temperature

Tstg

-55 to 150

°C

Parameter

Symbol

S150J (R)

S150K (R)

Unit

Diode forward voltage

1.2

10

μA

15

mA

Thermal characteristics

Thermal resistance, junction -

case

RthJC

0.35

°C/W

-55 to 150

TC = 25 °C, tp = 8.3 ms

840

1200

1000

Surge non-repetitive forward

current, Half Sine Wave

IF,SM

-55 to 150

S150Q (R)

10

S150M (R)

0.35

VR = 600 V, Tj = 150 °C

0.35

1.2

9

VR = 600 V, Tj = 25 °C

IF = 150 A, Tj = 25 °C

TC ≤ 180 °C

Conditions

700

3140

-55 to 150

150

15

A

3140

Reverse current

IR

VF

3140

V

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Feb 2016

Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/

1

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S150M 데이터시트(PDF) 1 Page - GeneSiC Semiconductor, Inc.

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