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S400K 데이터시트(PDF) 1 Page - GeneSiC Semiconductor, Inc.

부품명 S400K
상세설명  Silicon Standard Recovery Diode
PDF  3 Pages
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제조업체  GENESIC [GeneSiC Semiconductor, Inc.]
홈페이지  http://www.genesicsemi.com/
Logo GENESIC - GeneSiC Semiconductor, Inc.

S400K 데이터시트(HTML) 1 Page - GeneSiC Semiconductor, Inc.

  S400K Datasheet HTML 1Page - GeneSiC Semiconductor, Inc. S400K Datasheet HTML 2Page - GeneSiC Semiconductor, Inc. S400K Datasheet HTML 3Page - GeneSiC Semiconductor, Inc.  
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VRRM = 800 V - 1600 V
IF = 400 A
Features
• High Surge Capability
DO-9 Package
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
3. Stud is base.
Parameter
Symbol
Unit
Repetitive peak reverse voltage
VRRM
V
• Types from 800 V to 1600 V VRRM
Silicon Standard
Recovery Diode
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
800
1600
Conditions
S400K (R)
S400Q (R)
S400Y (R)
1200
S400K thru S400YR
2. Reverse polarity (R): Stud is anode.
Repetitive peak reverse voltage
RRM
V
RMS reverse voltage
VRMS
V
DC blocking voltage
VDC
V
Continuous forward current
IF
A
Operating temperature
Tj
°C
Storage temperature
Tstg
°C
Parameter
Symbol
Unit
Diode forward voltage
μA
mA
Thermal characteristics
Thermal resistance, junction -
case
RthJC
°C/W
0.14
400
400
400
8640
8640
8640
1131
1600
1.2
1.2
-55 to 150
12
1200
800
10
S400Y (R)
1.2
10
10
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
S400K (R)
0.14
0.14
VR = 50 V, Tj = 175 °C
12
12
V
TC = 25 °C, tp = 8.3 ms
TC ≤ 120 °C
Conditions
848
566
S400Q (R)
VR = 50 V, Tj = 25 °C
IF = 400 A, Tj = 25 °C
Reverse current
IR
VF
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive forward
current, Half Sine Wave
IF,SM
A
Feb 2016
Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
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