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ISL55100AEVAL3Z 데이터시트(PDF) 4 Page - Renesas Technology Corp

부품명 ISL55100AEVAL3Z
상세설명  Quad 18V Pin Electronics Driver/Window Comparator
PDF  14 Pages
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제조업체  RENESAS [Renesas Technology Corp]
홈페이지  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

ISL55100AEVAL3Z 데이터시트(HTML) 4 Page - Renesas Technology Corp

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ISL55100A
FN7486 Rev 3.00
Page 4 of 14
December 4, 2014
Absolute Maximum Ratings
Thermal Information
VCC to VEE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 19V
VEXT to VEE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 7V
Input Voltages
DATA, DRV EN, CVX, VH, VL, VINP, COMPX, LOWSWING
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (VEE - 0.5V) to (VCC + 0.5V)
Output Voltages
DOUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (VEE - 0.5V) to (VH + 0.5V)
QX . . . . . . . . . . . . . . . . . . . . . (COMP LOW - 0.5V) to (COMP HIGH + 0.5V)
Thermal Resistance (Typical, Notes 4, 5)
JA (°C/W) JC (°C/W)
72 Ld QFN Package . . . . . . . . . . . . . . . . . . . 23
2.0
Maximum Junction Temperature (Plastic Package) . . . . . . . . . . . +150°C
Maximum Storage Temperature Range . . . . . . . . . . . . . -65°C to +150°C
Pb-Free Reflow Profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . see TB493
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product
reliability and result in failures not covered by warranty.
NOTES:
4.
JA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See Tech
Brief TB379.
5. For
JC, the “case temp” location is the center of the exposed metal pad on the package underside.
6. Device temperature is closely tied to data-rates, driver loads and overall pin activity. Review “Power Dissipation Considerations” on page 9 for more
information.
Recommended Operating Conditions
PARAMETER
SYMBOL
MIN
(Note 13)TYP
MAX
(Note 13)UNITS
Device Power-(VEXT = VEE) VEXT Not Used
VCC - VEE
12 (Note 10)15
18
V
Device Power-(VEXT = VEE + 5.5V)
VCC - VEE
9 (Note 10)15
18
V
VEXT Optional External Logic Power
VEXT - VEE
5.5 (Note 10)
5.75
6.0
V
Driver Output High Rail
VH
VEE + 1
-
VCC - 0.5
V
Driver Output Low Rail
VL
VEE + 0.5
-
VEE + 6
V
Comparator Output High Rail
COMP-High
VEE + 1
-
VCC - 0.5
V
Comparator Output Low Rail
COMP-Low
VEE + 0.5
-
VEE + 6
V
Ambient Temperature
TA
-40
-
+85
°C
Junction Temperature
TJ
-
-
+150
°C
Electrical Specifications
Test Conditions: VCC = 12V, VEE = -3V, VH = 6V, VL = 0V, Comp-High = 5V, Comp-Low = 0V, V5V = VEE and
LOWSWING = VCC.
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
DRIVER DC CHARACTERISTICS
ISL55100A Output Resistance
ROUTD
IO = ±200mA, data not toggling
3
4.5
7.0
Ω
ISL55100A DC Output Current
IOUTD
Per Individual driver
±200
-
-
mA
ISL55100A AC Output Current (Note 6)IOUTDAC
Per Individual driver
-
1.0
-
A
ISL55100A Minimum Output Swing
VOMIN
VH = 200mV, VL = 0V
185
-
-
mV
Disabled HIZ Leakage Current
HIZ
VOUT = VCC with VH = VL + VEE or VOUT = VEE
with VH = VL = VCC
-1
0
1
µA
DRIVER TIMING CHARACTERISTICS
Data
 to DOUT Propagation Delay
tPD
Lowswing Disabled (Note 9)8
12
16
ns
Lowswing Enabled (Note 9)9
13
17
ns
Driver Timing Skew, All Edges (Note 7)
-
<1
-
ns
Disable (HIZ) Time
tDIS
DVREN
 Transition from Enable to Disable
16
18
26
ns



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