© 2016 Semiconductor Component Industries, LLC

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FAM65V05DF1 Rev. 1.0

www.fairchildsemi.com

5

Stresses exceeding the Absolute Maximum Ratings may damage the device. The device may not function or be

operable above the recommended operating conditions and stressing the parts to these levels is not recommended.

In addition, extended exposure to stresses above the recommended operating conditions may affect device

reliability.

Inverter Part

Symbol

Parameter

Condition

Rating

Unit

Supply voltage

500

V

Supply Voltage (surge)

dI/dt

≤ 3A/ns

575

V

Collector-emitter Voltage at the

IGBT/diode

650

V

IGBT continuous collector current

(Note1)

50

A

IGBT peak collector pulse current

(Note 6)

150

A

Collector Dissipation

333

W

Junction Temperature

IGBT/Diode

-40 ~ +175

°C

Driver IC

-40 ~ +150

°C

Control Part

Symbol

Parameter

Condition

Rating

Unit

Control Supply Voltage

20

V

High-side Control Bias Voltage

20

V

Input Signal Voltage

V

Fault Output Supply Voltage

V

Fault Output Current

5

mA

Current Sensing Input Voltage

V

Temperature sense unit

V

Total System

Symbol

Parameter

Condition

Rating

Unit

Storage Temperature

-40 ~ 125

°C

Isolation Voltage

60Hz, Sinusoidal, AC 1 minute,

Connection Pins to heat sink plate

2500

Max lead temperature at the base

of the package during pcb

assembly

No remelt of internal solder joints

200

°C

Package Characteristics

Symbol

Parameter

Conditions

Typ.

Max.

Units

Junction to Case Thermal

Resistance

(2)

Inverter IGBT part (per IGBT)

-

0.45

°C/W

Inverter FWD part (per DIODE)

-

0.85

°C/W

L

Package Stray Inductance

(3)

24

-

nH

Notes:

1.

Current limited by package terminal, defined by design

2.

Case temperature measured below the package at the chip center, compliant with MIL STD 883-1012.1 (single

chip heating), DBC discoloration allowed, please refer to application note AN-9190 (Impact of DBC Oxidation on

SPM

3.

Stray inductance per phase measured per IEC 60747-15