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FDMF3170 데이터시트(PDF) 4 Page - ON Semiconductor

부품명 FDMF3170
상세설명  Smart Power Stage (SPS) Modules
PDF  21 Pages
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제조업체  ONSEMI [ON Semiconductor]
홈페이지  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

FDMF3170 데이터시트(HTML) 4 Page - ON Semiconductor

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© 2016 Semiconductor Components Industries, LLC
www.onsemi.com
FDMF3170
Rev. 1.2
4
Absolute Maximum Ratings
Stresses exceeding the Absolute Maximum Ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only. TA = TJ = 25°C
Symbol
Parameter
Min.
Max.
Unit
VVCC
Supply Voltage
Referenced to AGND
-0.3
6.0
V
VPVCC
Drive Voltage
Referenced to AGND
-0.3
6.0
V
VEN
Module Enable
Referenced to AGND
-0.3
6.0
V
VPWM
PWM Signal Input
Referenced to AGND
-0.3
VCC
+0.3
V
VGL
Low Gate Manufacturing Test Pin
Referenced to AGND
-0.3
6.0
V
VIMON
Current Monitor Output
Referenced to AGND
-0.3
6.0
V
VREFIN
Current Monitor Output Reference
Referenced to AGND
-0.3
6.0
V
VTMON/FAULT Thermal Monitor Output
Referenced to AGND
-0.3
6.0
V
ITMON/FAULT
TMON/ FAULT Source Current
5.0
mA
VVIN
Power Input
Referenced to PGND, AGND
-0.3
25.0
V
Referenced to PGND, AC <20 ns
-0.3
30.0
V
VPHASE
PHASE
Referenced to PGND, AGND (DC Only)
-0.3
25.0
V
Referenced to PGND, AC <20 ns
-12.0
25.0
V
VSW
Switch Node Input
Referenced to PGND, AGND (DC Only)
-0.3
25.0
V
Referenced to PGND, AC
duration<20 ns
-7.0
25.0
V
VBOOT
Bootstrap Supply
Referenced to AGND (DC Only)
-0.3
30.0
V
Referenced to AGND, AC
duration<20 ns
-0.3
30.0
V
VBOOT-PHASE Boot to PHASE Voltage
-0.3
7.0
V
IO(peak)
Output Current
fSW=300 kHz, VIN=12 V, VOUT=1.8 V
70
A
fSW=1 MHz, VIN=12 V, VOUT=1.8 V
55
A
θJ-A
Junction-to-Ambient Thermal Resistance
10.5
°C/W
θJ-PCB
Junction-to-PCB Thermal Resistance (Fairchild SPS Evaluation Board)
6.5
°C/W
TA
Ambient Temperature Range
-40
+125
°C
TJ
Maximum Junction Temperature
+150
°C
TSTG
Storage Temperature Range
-55
+150
°C
ESD
Electrostatic Discharge Protection
Human Body Model, JESD22-A114
2000
V
Charged Device Model, JESD22-C101
1000
V



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