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FP40R12KT3 데이터시트(PDF) 4 Page - Infineon Technologies AG

부품명 FP40R12KT3
상세설명  IGBT-Module
PDF  11 Pages
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제조업체  INFINEON [Infineon Technologies AG]
홈페이지  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

FP40R12KT3 데이터시트(HTML) 4 Page - Infineon Technologies AG

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TechnischeInformation/TechnicalInformation
FP40R12KT3
IGBT-Module
IGBT-modules
preparedby:AS
approvedby:RS
dateofpublication:2013-10-03
revision:2.0
VorläufigeDaten
PreliminaryData
Diode,Brems-Chopper/Diode,Brake-Chopper
HöchstzulässigeWerte/MaximumRatedValues
PeriodischeSpitzensperrspannung
Repetitivepeakreversevoltage
Tvj = 25°C
VRRM

1200
 V
Dauergleichstrom
ContinuousDCforwardcurrent

IF

10
 A
PeriodischerSpitzenstrom
Repetitivepeakforwardcurrent
tP = 1 ms
IFRM

20
 A
Grenzlastintegral
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
I²t

20,0
 A²s
CharakteristischeWerte/CharacteristicValues
min.
typ.
max.
Durchlassspannung
Forwardvoltage
IF = 10 A, VGE = 0 V
IF = 10 A, VGE = 0 V
VF
1,80
1,85
2,25
V
V
Tvj = 25°C
Tvj = 125°C
Rückstromspitze
Peakreverserecoverycurrent
IF = 10 A, - diF/dt = 400 A/µs (Tvj=125°C)
VR = 600 V
IRM

14,0
15,0

A
A
Tvj = 25°C
Tvj = 125°C
Sperrverzögerungsladung
Recoveredcharge
IF = 10 A, - diF/dt = 400 A/µs (Tvj=125°C)
VR = 600 V
Qr

1,00
1,80

µC
µC
Tvj = 25°C
Tvj = 125°C
AbschaltenergieproPuls
Reverserecoveryenergy
IF = 10 A, - diF/dt = 400 A/µs (Tvj=125°C)
VR = 600 V
Erec

0,26
0,56

mJ
mJ
Tvj = 25°C
Tvj = 125°C
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proDiode/perdiode
RthJC


2,30
K/W
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions

Tvj op
-40

125
°C
NTC-Widerstand/NTC-Thermistor
CharakteristischeWerte/CharacteristicValues
min.
typ.
max.
Nennwiderstand
Ratedresistance
TC = 25°C
R25

5,00

k
Ω
AbweichungvonR100
DeviationofR100
TC = 100°C, R100 = 493
Ω
∆R/R
-5

5
%
Verlustleistung
Powerdissipation
TC = 25°C
P25


20,0
mW
B-Wert
B-value
R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))]
B25/50

3375

K
B-Wert
B-value
R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))]
B25/80

t.b.d.

K
B-Wert
B-value
R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))]
B25/100

t.b.d.

K
AngabengemäßgültigerApplicationNote.
Specificationaccordingtothevalidapplicationnote.



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