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BAS19 데이터시트(PDF) 2 Page - Diodes Incorporated |
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BAS19 데이터시트(HTML) 2 Page - Diodes Incorporated |
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2 / 4 page ![]() BAS19 / BAS20 / BAS21 Document number: DS12004 Rev. 22 - 2 2 of 4 www.diodes.com June 2018 © Diodes Incorporated BAS19 / BAS20 / BAS21 Maximum Ratings (@TA = 25°C, unless otherwise specified.) Characteristic Symbol BAS19 BAS20 BAS21 Unit Repetitive Peak Reverse Voltage VRRM 120 200 250 V Working Peak Reverse Voltage DC Blocking Voltage VRWM VR 100 150 200 V RMS Reverse Voltage VR(RMS) 71 106 141 V Forward Continuous Current (Note 6) IFM 400 mA Average Rectified Output Current (Note 6) IO 200 mA Non-Repetitive Peak Forward Surge Current @ t = 1.0µs @ t = 1.0s IFSM 2.5 0.5 A Repetitive Peak Forward Surge Current (Note 6) IFRM 625 mA Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 6) PD 250 mW Thermal Resistance Junction to Ambient Air (Note 6) RJA 500 °C/W Operating and Storage Temperature Range TJ , TSTG -65 to +150 °C Electrical Characteristics (@TA = 25°C, unless otherwise specified.) Characteristic Symbol Min Max Unit Test Condition Reverse Breakdown Voltage (Note 7) BAS19 BAS20 BAS21 V(BR)R 120 200 250 V IR = 100µA Forward Voltage VF 1.0 1.25 V IF = 100mA IF = 200mA Reverse Current @ Rated DC Blocking Voltage (Note 7) IR 100 15 nA µA TJ = 25C TJ = 100C Total Capacitance CT 5.0 pF VR = 0, f = 1.0MHz Reverse Recovery Time trr 50 ns IF = IR = 30mA, Irr = 0.1 x IR, RL = 100Ω Notes: 6. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com. IFM, IO are valid provided that terminals are kept at ambient temperature. 7. Short duration pulse test used to minimize self-heating effect. 0 120 160 200 250 200 150 50 40 80 100 0 T , AMBIENT TEMPERATURE ( C) Fig. 1 Power Derating Curve A ° Note 4 0.001 0.01 0.1 1 0 0.4 0.2 0. 6 V , INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics F 0.8 1.2 1.0 1.4 Note 6 |
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