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FS10R12VT3 데이터시트(PDF) 4 Page - Infineon Technologies AG |
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FS10R12VT3 데이터시트(HTML) 4 Page - Infineon Technologies AG |
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4 / 7 page ![]() 4 TechnischeInformation/TechnicalInformation FS10R12VT3 IGBT-Module IGBT-modules preparedby:MB approvedby:IG dateofpublication:2013-10-03 revision:2.0 VorläufigeDaten PreliminaryData SchaltverlusteIGBT,Wechselrichter(typisch) switchinglossesIGBT,Inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=±15V,IC=10A,VCE=600V RG [ Ω] 50 100 150 200 250 300 350 400 0,0 0,7 1,4 2,1 2,8 3,5 Eon, Tvj = 125°C Eoff, Tvj = 125°C TransienterWärmewiderstandIGBT,Wechselrichter transientthermalimpedanceIGBT,Inverter ZthJH=f(t) t [s] 0,001 0,01 0,1 1 10 0,1 1 10 ZthJH : IGBT i: ri[K/W]: τi[s]: 1 0,1724 0,0005 2 0,333 0,005 3 1,0295 0,05 4 0,865 0,2 SichererRückwärts-ArbeitsbereichIGBT,Wechselrichter (RBSOA) reversebiassafeoperatingareaIGBT,Inverter(RBSOA) IC=f(VCE) VGE=±15V,RGoff=82 Ω,Tvj=125°C VCE [V] 0 200 400 600 800 1000 1200 1400 0 2 4 6 8 10 12 14 16 18 20 22 IC, Modul IC, Chip DurchlasskennliniederDiode,Wechselrichter(typisch) forwardcharacteristicofDiode,Inverter(typical) IF=f(VF) VF [V] 0,0 0,5 1,0 1,5 2,0 2,5 0 2 4 6 8 10 12 14 16 18 20 Tvj = 25°C Tvj = 125°C |
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