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FS15R12VT3 데이터시트(PDF) 5 Page - Infineon Technologies AG |
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FS15R12VT3 데이터시트(HTML) 5 Page - Infineon Technologies AG |
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5 / 7 page ![]() 5 TechnischeInformation/TechnicalInformation FS15R12VT3 IGBT-Module IGBT-modules preparedby:DPK approvedby:IG dateofpublication:2013-10-03 revision:2.0 VorläufigeDaten PreliminaryData SchaltverlusteDiode,Wechselrichter(typisch) switchinglossesDiode,Inverter(typical) Erec=f(IF) RGon=62 Ω,VCE=600V IF [A] 0 3 6 9 12 15 18 21 24 27 30 0,00 0,25 0,50 0,75 1,00 1,25 1,50 Erec, Tvj = 125°C SchaltverlusteDiode,Wechselrichter(typisch) switchinglossesDiode,Inverter(typical) Erec=f(RG) IF=15A,VCE=600V RG [ Ω] 50 140 230 320 410 500 590 680 0,00 0,25 0,50 0,75 1,00 1,25 Erec, Tvj = 125°C TransienterWärmewiderstandDiode,Wechselrichter transientthermalimpedanceDiode,Inverter ZthJH=f(t) t [s] 0,001 0,01 0,1 1 10 0,01 0,1 1 10 ZthJH : Diode i: ri[K/W]: τi[s]: 1 0,156 0,00032 2 0,52 0,00544 3 1,456 0,10799 4 0,468 0,146 |
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