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BFP196WN 데이터시트(PDF) 4 Page - Infineon Technologies AG |
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BFP196WN 데이터시트(HTML) 4 Page - Infineon Technologies AG |
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4 / 19 page ![]() 2 Thermal characteristics Table 2 Thermal resistance Parameter Symbol Values Unit Note or Test Condition Min. Typ. Max. Junction - soldering point RthJS – 115 – K/W 1) Figure 1 Absolute maximum power dissipation Ptot vs. Ts Note: In the horizontal part of the above curve the junction temperature TJ is lower than TJ,max. In the declining slope it is TJ = TJ,max. Ptot has to be reduced according to the curve in order not to exceed TJ,max. It is TJ,max = TS + Ptot * RTHJS. 1 For the definition of RthJS please refer to the application note AN077 BFP196WN Low noise silicon bipolar RF transistor Thermal characteristics Preliminary datasheet 4 Revision 1.0 2017-01-20 |
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