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MS2212 데이터시트(PDF) 1 Page - Advanced Power Technology

부품명 MS2212
상세설명  RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
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MS2212 데이터시트(HTML) 1 Page - Advanced Power Technology

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12-10-2002
MS2212
DESCRIPTION:
DESCRIPTION:
The MS2212 is designed for specialized avionics applications,
including JTIDS where power is providedunder pulse formats
utilizing short pulse widths and highburst or overall duty cycles.
ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)
Symbol
Parameter
Value
Unit
PDISS
Power Dissipation
50
W
IC
Device Current
1.8
A
VCC
Collector - Supply Voltage
32
V
TJ
Junction Temperature
250
°°
C
TSTG
Storage Temperature
- 65 to +200
°°
C
Thermal Data
Thermal Data
RTH(j-c)
Junction-Case Thermal Resistance
3.0
°°
C/W
Features
Features
·
960 – 1215 MHz
·
28 VOLTS
·
INPUT/OUTPUT MATCHING
·
POUT = 15 WATTS
·
GP = 8.1 dB MINIMUM
·
COMMON BASE CONFIGURATION
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS


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