NTE65

Silicon NPN Transistor

High Voltage, Low Noise for CATV, MATV

Description:

The NTE65 is silicon NPN transistor designed primarily for use in high–gain, low–noise, small–signal

amplifier and also used in applications requiring fast switching times.

Features:

D High Current–Gain Bandwidth Product

D Low Noise Figure

D High Power Gain

Absolute Maximum Ratings:

15V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

20V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

3V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

30mA

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

180mW

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Derate Above 60

°C

2.0mW/

°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65

° to +150°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

500

°C/W

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

OFF Characteristics

Collector–Emitter Breakdown Voltage

15

–

–

V

Collector–Base Breakdown Voltage

20

–

–

V

Emitter–Base Breakdown Voltage

3

–

–

V

Collector Cutoff Current

–

–

50

nA

ON Characteristics

DC Current Gain

25

–

250