MMRF1007H datasheet(1/17 Pages) NXP

부품명	MMRF1007H

상세설명	RF Power Field Effect Transistors

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MMRF1007HR5 MMRF1007HSR5

1

RF Device Data

Freescale Semiconductor, Inc.

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

RF power transistors designed for applications operating at frequencies

from 900 to 1215 MHz. These devices are suitable for use in defense and

commercial pulse applications, such as IFF and DME.

 Typical Pulse Performance: VDD =50 Vdc,IDQ = 150 mA, Pout =

1000 W Peak (100 W Avg.), f = 1030 MHz, Pulse Width = 128 sec, Duty

Cycle = 10%

Power Gain — 20 dB

Drain Efficiency — 56%

 Capable of Handling 5:1 VSWR, @ 50 Vdc, 1030 MHz, 1000 W Peak Power

Features

 Characterized with Series Equivalent Large--Signal Impedance Parameters

 Internally Matched for Ease of Use

 Qualified Up to a Maximum of 50 VDD Operation

 Integrated ESD Protection

 Designed for Push--Pull Operation

 Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

 In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain--Source Voltage

VDSS

--0.5, +110

Vdc

Gate--Source Voltage

VGS

--6.0, +10

Vdc

Storage Temperature Range

Tstg

-- 65 to +150

C

Case Operating Temperature

TC

150

C

Operating Junction Temperature (1)

TJ

225

C

1. Continuous use at maximum temperature will affect MTTF.

Document Number: MMRF1007H

Rev. 0, 12/2013

Freescale Semiconductor

Technical Data

965--1215 MHz, 1000 W, 50 V

LATERAL N--CHANNEL

BROADBAND

RF POWER MOSFETs

MMRF1007HR5

MMRF1007HSR5

NI--1230H--4S

MMRF1007HR5

PARTS ARE PUSH--PULL

NI--1230S--4S

MMRF1007HSR5

(Top View)

RFoutA/VDSA

31

42 RFoutB/VDSB

RFinA/VGSA

RFinB/VGSB

Figure 1. Pin Connections

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