MMRF1008HS datasheet(2/19 Pages) NXP

2 / 19 page

RF Device Data

Freescale Semiconductor, Inc.

MMRF1008H MMRF1008HS MMRF1008GH

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain--Source Voltage

VDSS

--0.5, +100

Vdc

Gate--Source Voltage

VGS

--6.0, +10

Vdc

Storage Temperature Range

Tstg

-- 65 to +150

C

Case Operating Temperature

150

C

Operating Junction Temperature (1)

225

C

Table 2. Thermal Characteristics

Characteristic

Symbol

Value (2)

Unit

Thermal Resistance, Junction to Case

Case Temperature 80C, 275 W Peak 128 sec Pulse Width, 10% Duty Cycle,

50 Vdc, IDQ = 100 mA, 1030 MHz

ZJC

0.08

C/W

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22--A114)

2, passes 2600 V

Machine Model (per EIA/JESD22--A115)

B, passes 200 V

Charge Device Model (per JESD22--C101)

IV, passes 2000 V

Table 4. Electrical Characteristics (TA =25C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Gate--Source Leakage Current

(VGS =5 Vdc, VDS =0 Vdc)

IGSS

—

Adc

Drain--Source Breakdown Voltage

(VGS =0 Vdc, ID = 100 mA)

V(BR)DSS

110

—

Vdc

Zero Gate Voltage Drain Leakage Current

(VDS =50 Vdc, VGS =0 Vdc)

IDSS

—

Adc

Zero Gate Voltage Drain Leakage Current

(VDS =90 Vdc, VGS =0 Vdc)

IDSS

—

100

Adc

On Characteristics

Gate Threshold Voltage

(VDS =10 Vdc, ID = 662 Adc)

VGS(th)

0.9

1.7

2.4

Vdc

Gate Quiescent Voltage

(VDD =50 Vdc, ID = 100 mAdc, Measured in Functional Test)

VGS(Q)

1.7

2.4

3.2

Vdc

Drain--Source On--Voltage

(VGS =10 Vdc, ID =1.6 Adc)

VDS(on)

—

0.25

—

Vdc

Dynamic Characteristics (3)

Reverse Transfer Capacitance

(VDS =50 Vdc  30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)

Crss

—

0.46

—

Output Capacitance

(VDS =50 Vdc  30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)

Coss

—

352

—

Input Capacitance

(VDS =50 Vdc, VGS =0 Vdc  30 mV(rms)ac @ 1 MHz)

Ciss

—

695

—

1. Continuous use at maximum temperature will affect MTTF.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.

3. Part internally matched both on input and output.

(continued)

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