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MMRF1314GS 데이터시트(PDF) 8 Page - NXP Semiconductors

부품명 MMRF1314GS
상세설명  RF Power LDMOS Transistors
PDF  17 Pages
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제조업체  NXP [NXP Semiconductors]
홈페이지  http://www.nxp.com
Logo NXP - NXP Semiconductors

MMRF1314GS 데이터시트(HTML) 8 Page - NXP Semiconductors

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RF Device Data
NXP Semiconductors
MMRF1314H MMRF1314HS MMRF1314GS
TYPICAL CHARACTERISTICS — 1400 MHz
PRODUCTION TEST FIXTURE
Pout, OUTPUT POWER (WATTS) PEAK
Figure 9. Power Gain and Drain Efficiency
versus Output Power
21
10
100
20
80
60
50
40
ηD
14
1000
18
19
16
17
15
70
30
20
10
0
P3dB
(W)
60
29
56
54
Pin, INPUT POWER (dBm) PEAK
Figure 10. Output Power versus Input Power
58
50
48
52
31
33
35
37
39
41
43
45
46
62
1400
948
1079
f
(MHz)
P1dB
(W)
VDD =50 Vdc,IDQ(A+B) = 100 mA, f = 1400 MHz
Pulse Width = 128 μsec, Duty Cycle = 10%
Gps
VDD =50 Vdc,IDQ(A+B) = 100 mA, f = 1400 MHz
Pulse Width = 128 μsec, Duty Cycle = 10%
13
12
90
44
14
22
10
100
Pout, OUTPUT POWER (WATTS) PEAK
Figure 11. Power Gain versus Output Power
1000
20
18
16
12
300 mA
100 mA
500 mA
IDQ(A+B) = 700 mA
14
10
100
Pout, OUTPUT POWER (WATTS) PEAK
Figure 12. Power Gain versus Output Power
20
1000
18
IDQ(A + B) = 100 mA, f = 1400 MHz,
Pulse Width = 128 μsec, Duty Cycle = 10%
16
10
12
50 V
Pin, INPUT POWER (dBm) PEAK
Figure 13. Output Power versus Input Power
29
0
200
400
600
800
1000
1200
1400
33
35
37
39
41
43
45
30
25
65
100
55
Pout, OUTPUT POWER (WATTS) PEAK
Figure 14. Power Gain and Drain Efficiency versus
Output Power
ηD
23
1000
45
21
19
17
35
Gps
13
11
15
35 V
35 V
40 V
45 V
VDD =30 V
TC = –40_C
VDD =50 Vdc,IDQ(A+B) = 100 mA, f = 1400 MHz
Pulse Width = 128 μsec, Duty Cycle = 10%
25_C
25_C
85_C
31
27
VDD =50 Vdc,IDQ(A+B) = 100 mA, f = 1400 MHz
Pulse Width = 128 μsec, Duty Cycle = 10%
TC = –40_C
85_C
25_C
85_C
25_C –40_C
0
15
VDD = 50 Vdc, f = 1400 MHz
Pulse Width = 128 μsec, Duty Cycle = 10%
2000
2000
2000
2000



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