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RDBF251 데이터시트(PDF) 2 Page - Diodes Incorporated

부품명 RDBF251
상세설명  2.5A SURFACE MOUNT FAST GLASS PASSIVATED BRIDGE RECTIFIER
PDF  5 Pages
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제조업체  DIODES [Diodes Incorporated]
홈페이지  http://www.diodes.com
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RDBF251 데이터시트(HTML) 2 Page - Diodes Incorporated

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RDBF251-RDBF2510
Document number: DS39411
Rev. 2 - 2
2 of 5
www.diodes.com
June 2018
© Diodes Incorporated
RDBF251-RDBF2510
Maximum Ratings and Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
RDBF251
RDBF252
RDBF254
RDBF256
RDBF258
RDBF2510
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
100
200
400
600
800
1000
V
RMS Reverse Voltage
VR(RMS)
70
140
280
420
560
700
V
Average Rectified Output Current (Note 5) @
TC = +110°C
IO
2.5
A
Non-Repetitive Peak Forward Surge Current,
8.3ms
Single Half Sine-Wave Superimposed on
Rated Load
IFSM
75
A
I
2
t Rating for Fusing (1ms < t < 8.3ms)
I
2
t
23.34
A
2
S
Max Forward Voltage (Per Element)
@IF=2.5A
VFM
1.3
V
Maximum Reverse Recovery Time (Note 7)
tRR
150
250
500
ns
Peak Reverse Current
@TA=+25℃
At Rated DC Blocking Voltage @TA=+125℃
(Note 8)
IR
5.0
500
µA
Total Capacitance (Per Element) (Note 9)
CT
30
pF
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Typical Thermal Resistance, Junction to Ambient (Note 6)
(Per Element)
RθJA
35
°C/W
Typical Thermal Resistance, Junction to Case (Per Element)
RθJC
7.8
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Notes:
5. Device mounted on glass epoxy PC board with 1.3mm
2 solder pad.
6. Device mounted on glass epoxy substrate with 1oz/ft
2, 30mmx30mm copper pad per pin.
7. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.
8. Short duration pulse test used to minimize self-heating effect.
9. Measured with VR = 4.0VDC, f = 1MHz



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