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STP12NK80Z 데이터시트(PDF) 2 Page - STMicroelectronics

부품명 STP12NK80Z
상세설명  N-CHANNEL 800V - 0.65 OHM - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH Power MOSFET
PDF  15 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP12NK80Z 데이터시트(HTML) 2 Page - STMicroelectronics

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1 Electrical ratings
STB12NK80Z - STP12NK80Z - STW12NK80Z
2/15
1
Electrical ratings
Table 1.
Absolute maximum ratings
Table 2.
Thermal data
Table 3.
Avalanche characteristics
Symbol
Parameter
Value
Unit
VDS
Drain-Source Voltage (VGS = 0)
800
V
VDGR
Drain-gate Voltage (RGS = 20kΩ)
800
V
VGS
Gate-Source Voltage
± 30
V
ID
Drain Current (continuous) at TC = 25°C
10.5
A
ID
Drain Current (continuous) at TC = 100°C
6.6
A
IDM Note 2
Drain Current (pulsed)
42
A
PTOT
Total Dissipation at TC = 25°C
190
W
Derating Factor
1.51
W/°C
Vesd(G-S)
G-S ESD (HBM C=100pF, R=1.5k
Ω)
6000
V
dv/dt
Note 1
Peak Diode Recovery voltage slope
4.5
V/ns
Tj
Tstg
Operating Junction Temperature
Storage Temperature
-55 to 150
°C
TO-220/D²PAK
TO-247
Unit
Rthj-case
Thermal Resistance Junction-case Max
0.66
°C/W
Rthj-amb
Thermal Resistance Junction-amb Max
62.5
50
°C/W
Tl
Maximum Lead Temperature For Soldering
Purpose
300
°C
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, repetitive or
Not-Repetitive (pulse width limited by Tj max)
10.5
A
EAS
Single Pulse Avalanche Energy
(starting Tj=25°C, ID=IAR, VDD= 50V)
400
mJ



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