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TLP206G 데이터시트(PDF) 3 Page - Toshiba Semiconductor

부품명 TLP206G
상세설명  TOSHIBA Photocoupler GaAs Ired & Photo-MOS FET
PDF  6 Pages
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제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
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TLP206G 데이터시트(HTML) 3 Page - Toshiba Semiconductor

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TLP206G
2002-09-25
3
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Forward voltage
VF
IF = 10 mA
1.0
1.15
1.3
V
Reverse current
IR
VR = 5 V
—
—
10
µA
Capacitance
CT
V = 0, f = 1 MHz
—
30
—
pF
Off
-state current
IOFF
VOFF = 350 V
—
—
1
µA
Capacitance
COFF
V = 0,f = 1MHZ
—
40
—
pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
MIn.
Typ.
Max.
Unit
Trigger LED current
IFT
ION = 120 mA
—
1
3
mA
On
-state resistance
RON
ION = 120 mA, IF = 5 mA
—
22
35
Ω
Isolation Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Capacitance input to output
CS
VS = 0, f = 1 MHz
—
0.8
—
pF
Isolation resistance
RS
VS = 500 V, R.H. ≤ 60%
5×10
10
10
14
—
Ω
AC, 1 minute
1500
—
—
AC, 1 second, in oil
—
3000
—
Vrms
Isolation voltage
BVS
DC, 1 minute, in oil
—
3000
—
Vdc
Switching Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Turn
-on time
tON
—
0.3
1
Turn
-off time
tOFF
RL = 200Ω
(Note 3)
VDD = 20 V, IF = 5 mA
—
0.1
1
ms
(Note 3): Switching time test circuit
1, 3
VDD
VOUT
RL
5, 7
IF
6, 8
2, 4
tOFF
tON
10%
90%
VOUT
IF



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