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AFT09S200W02N 데이터시트(PDF) 6 Page - NXP Semiconductors |
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AFT09S200W02N 데이터시트(HTML) 6 Page - NXP Semiconductors |
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6 / 19 page ![]() 6 RF Device Data Freescale Semiconductor, Inc. AFT09S200W02NR3 AFT09S200W02GNR3 TYPICAL CHARACTERISTICS — 920–960 MHz 1 ACPR Pout, OUTPUT POWER (WATTS) AVG. Figure 6. Single--Carrier W--CDMA Power Gain, Drain Efficiency and ACPR versus Output Power --10 --20 15 21 0 60 50 40 30 20 D 20 19 10 100 200 10 --60 18 17 16 0 --30 --40 --50 Figure 7. Broadband Frequency Response 0 24 f, FREQUENCY (MHz) VDD =28 Vdc Pin =0 dBm IDQ = 1400 mA 16 12 8 20 4 800 850 900 950 1000 1050 1100 1150 1200 --35 25 15 5 --5 --15 --25 Gain VDD =28 Vdc,IDQ = 1400 mA Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF IRL 920 MHz 940 MHz 960 MHz 920 MHz 940 MHz 960 MHz 920 MHz 940 MHz 960 MHz Gps |
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