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SFF2002GD 데이터시트(PDF) 1 Page - Thinki Semiconductor Co., Ltd. |
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SFF2002GD 데이터시트(HTML) 1 Page - Thinki Semiconductor Co., Ltd. |
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1 / 2 page ![]() Features Low forward voltage drop Super fast switching for high efficiency High current capability Case: ITO-220AB full plastic isolated package High surge current capability Weight: 1.90 gram approximately Polarity: As marked on diode body method 208 Mounting position: Any Terminals: Solderable per MIL-STD-202 Mechanical Data Low reverse leakage current Epoxy: UL 94V-0 rate flame retardant SFF2001GD thru SFF2008GD Pb Free Plating Product SFF2001GD thru SFF2008GD 20.0 Amperes Insulated Dual Doubler Polarity Super Fast Recovery Rectifiers © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 1/2 Application Pb Automotive Inverters and Solar Inverters Plating Power Supply,SMPS and UPS Car Audio Amplifiers and Sound Device Systems Rev.08T ITO-220AB/TO-220F-3L Positive Negative Common Cathode Case Case Common Anode Doubler Case Tandem Polarity Case Series Tandem Polarity Suffix "GA" Suffix "GD" Suffix "GS" Suffix "G" .189(4.8) .406(10.3) .130(3.3) .114(2.9) .071(1.8) .055(1.4) .035(0.9) .011(0.3) (2.55) (2.55) .1 .1 .032(.8) .134(3.4) .165(4.2) .381(9.7) .114(2.9) .098(2.5) .055(1.4) .039(1.0) MAX .118(3.0) Unit : inch (mm) VRRM 50 100 150 200 300 400 500 600 V VRMS 35 70 105 140 210 280 350 420 V VDC 50 100 150 200 300 400 500 600 V IF(AV) A trr ns CJ pF RθJC °C/W TJ °C TSTG °C MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) UNIT Maximum repetitive peak reverse voltage PARAMETER SYMBOL SFF 2001 GD Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current 20 Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 150 A Maximum instantaneous forward voltage (Note 1) @ 10 A VF 0.975 1.3 1.7 V Maximum reverse current @ rated VR TJ=25°C IR 10 μA TJ=125°C 400 - 55 to +150 Storage temperature range - 55 to +150 Note 1: Pulse test with PW=300μs, 1% duty cycle Note 2: Test conditions: IF=0.5A, IR=1.0A, IRR=0.25A. Maximum reverse recovery time (Note 2) 35 Typical junction capacitance (Note 3) Typical thermal resistance 2.5 Note 3: Measured at 1 MHz and applied reverse voltage of 4.0 V DC. SFF 2002 GD SFF 2003 GD SFF 2004 GD SFF 2005 GD SFF 2006 GD SFF 2007 GD SFF 2008 GD 90 Operating junction temperature range |
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