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L272AM 데이터시트(PDF) 4 Page - ON Semiconductor

부품명 L272AM
상세설명  Dual Power Operational Amplifier
PDF  10 Pages
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제조업체  ONSEMI [ON Semiconductor]
홈페이지  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

L272AM 데이터시트(HTML) 4 Page - ON Semiconductor

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© 2001 Fairchild Semiconductor Corporation
www.fairchildsemi.com
L272 / L272A Rev. 1.2.0
3
Electrical Characteristics (L272)
VCC = +12 V, VEE = -12 V; Values are at TA = 25°C unless otherwise noted.
Note:
2. Guaranteed by design; not 100% tested in production.
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
VS
Supply Voltage (VCC - VEE)4
28
V
IS
Supply Current
VO = VCC/2,
VCC = 24 V, VEE = 0 V
8.0
12.0
mA
VO = VCC/2,
VCC = 12 V, VEE = 0 V
7.5
11.0
IBIAS
Input Bias Current
0.3
2.5
µA
VIO
Input Offset Voltage
15
60
mV
IIO
Input Offset Current
50
250
nA
SR
Slew Rate
VIN = 1VPP, Unit Gain
1
V/µs
GBW
Gain-Bandwidth Product
350
kHz
RI
Input Resistance
500
kΩ
GV
Large-Signal Voltage Gain
VO(pp) = ±10 V
65
75
dB
eN
Input Noise Voltage
B = 20 kHz
10
µV
IN
Input Noise Current
B = 20 kHz
200
pA
CMRR
Common Mode Rejection Ratio
60
75
dB
PSRR
Supply Voltage Rejection Ratio
VCC = +15 V, VEE = -15 V
VCC = +5 V, VEE = -5 V
54
62
dB
VO
Output Voltage Swing
VCC = 24 V, VEE = 0 V,
IP = 0.1 A
21.0
23.0
V
VCC = 24 V, VEE = 0 V,
IP = 0.5 A
21.0
22.5
CS
Channel Separation
f = 1 kHz, RL = 10 Ω,
GV = 30 dB
60
dB
THD
Total Harmonic Distortion
f = 1 kHz, GV = 1 dB,
RL = ∞
0.5
%
TSD
Thermal Shutdown
Temperature(2)
160
°C



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