2

RF Device Data

Freescale Semiconductor, Inc.

MMRF2004NBR1

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain--Source Voltage

--0.5, +65

Vdc

Gate--Source Voltage

--0.5, +10

Vdc

Operating Voltage

32, +0

Vdc

Storage Temperature Range

-- 65 to +150

C

Case Operating Temperature

150

C

225

C

Input Power

22

dBm

Table 2. Thermal Characteristics

Characteristic

Symbol

Unit

Thermal Resistance, Junction to Case

WiMAX Application

CW Application

5.9

1.4

5.5

1.3

C/W

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22--A114)

1B

Machine Model (per EIA/JESD22--A115)

A

Charge Device Model (per JESD22--C101)

II

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD22--A113, IPC/JEDEC J--STD--020

3

260

C

Characteristic

Symbol

Min

Typ

Max

Unit

Stage 1 -- Off Characteristics

Zero Gate Voltage Drain Leakage Current

—

—

10

Adc

Zero Gate Voltage Drain Leakage Current

—

—

1

Adc

Gate--Source Leakage Current

—

—

1

Adc

Stage 1 -- On Characteristics

Gate Threshold Voltage

1.2

1.9

2.7

Vdc

Gate Quiescent Voltage

—

2.7

—

Vdc

Fixture Gate Quiescent Voltage

12.5

15.8

19.5

Vdc

1. Continuous use at maximum temperature will affect MTTF.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

(continued)