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BAV20WS 데이터시트(PDF) 1 Page - Vishay Siliconix |
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BAV20WS 데이터시트(HTML) 1 Page - Vishay Siliconix |
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1 / 4 page ![]() BAV19WS, BAV20WS, BAV21WS www.vishay.com Vishay Semiconductors Rev. 2.2, 12-Jul-17 1 Document Number: 85726 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Small Signal Switching Diodes, High Voltage DESIGN SUPPORT TOOLS click logo to get started MECHANICAL DATA Case: SOD-323 Weight: approx. 4.3 mg Packaging codes / options: 18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/box FEATURES • Silicon epitaxial planar diodes • For general purpose • AEC-Q101 qualified available • Base P/N-E3 - RoHS-compliant, commercial grade • Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note (1) Valid provided that leads are kept at ambient temperature Available Models PARTS TABLE PART TYPE DIFFERENTIATION ORDERING CODE TYPE MARKING CIRCUIT CONFIGURATION REMARKS BAV19WS VR = 100 V BAV19WS-E3-08 or BAV19WS-E3-18 BAV19WS-HE3-08 or BAV19WS-HE3-18 A8 Single Tape and reel BAV20WS VR = 150 V BAV20WS-E3-08 or BAV20WS-E3-18 BAV20WS-HE3-08 or BAV20WS-HE3-18 A9 Single Tape and reel BAV21WS VR = 200 V BAV21WS-E3-08 or BAV21WS-E3-18 BAV21WS-HE3-08 or BAV21WS-HE3-18 AA Single Tape and reel ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT Continuous reverse voltage BAV19WS VR 100 V BAV20WS VR 150 V BAV21WS VR 200 V Repetitive peak reverse voltage BAV19WS VRRM 120 V BAV20WS VRRM 200 V BAV21WS VRRM 250 V Forward continuous current (1) IF 250 mA Rectified current (average) half wave rectification with resistive load (1) IF(AV) 200 mA Repetitive peak forward current (1) f ≥ 50 Hz, θ = 180° IFRM 625 mA Surge forward current t < 1 s, TJ = 25 °C IFSM 1A Power dissipation Ptot 200 mW THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Thermal resistance junction to ambient air RthJA 625 K/W Thermal resistance junction to lead RthJL 450 K/W Junction temperature Tj 150 °C Storage temperature range Tstg -65 to +150 °C Operating temperature range Top -55 to +150 °C |
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