AFV121KGS datasheet(7/20 Pages) NXP

7 / 20 page

AFV121KH AFV121KHS AFV121KGS

RF Device Data

Freescale Semiconductor, Inc.

TYPICAL CHARACTERISTICS — 960–1215 MHz

REFERENCE CIRCUIT

1300

900

IRL

Gps

f, FREQUENCY (MHz)

Figure 6. Power Gain, Drain Efficiency and IRL

versus Frequency at a Constant Input Power

1150

1100

1050

1000

950

--11

–4

--6

D

16.5

13.5

12.5

18.5

17.5

15.5

1200

1250

VDD =50 Vdc,Pin =25 W,IDQ(A+B) = 100 mA

Pulse Width = 128 sec, Duty Cycle = 10%

--5

--7

14.5

--9

--8

--10

Pout, OUTPUT POWER (WATTS) PEAK

Figure 7. Power Gain and Drain Efficiency versus

Output Power

VDD =50 Vdc, IDQ(A+B) = 100 mA

Pulse Width = 128 sec, Duty Cycle = 10%

800

Gps

D

200

400

600

1000

1030 MHz

960 MHz

1215 MHz

1030 MHz

960 MHz

1215 MHz

1200 1400 1600 1800

1090 MHz

250

1500

900

950

1250

1000

f, FREQUENCY (MHz)

1000

500

750

1050

1100

1150

1200

1250

1300

D

Pout

VDD =50 Vdc,IDQ(A+B) = 100 mA, Pin =25 W

Pulse Width = 128 sec, Duty Cycle = 10%

Figure 8. Output Power and Drain Efficiency versus

Frequency at a Constant Input Power

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