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BGS8M2 데이터시트(PDF) 6 Page - NXP Semiconductors

부품명 BGS8M2
상세설명  SiGe:C low-noise amplifier MMIC with bypass switch for LTE
PDF  15 Pages
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제조업체  NXP [NXP Semiconductors]
홈페이지  http://www.nxp.com
Logo NXP - NXP Semiconductors

BGS8M2 데이터시트(HTML) 6 Page - NXP Semiconductors

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NXP Semiconductors
BGS8M2
SiGe:C low-noise amplifier MMIC with bypass switch for LTE
BGS8M2
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2018. All rights reserved.
Product data sheet
Rev. 4 — 13 June 2018
COMPANY CONFIDENTIAL
6 / 15
9 Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
See legal section: "disclaimers" paragraph "Limiting values".
Symbol
Parameter
Conditions
Min
Max
Unit
VCC
supply voltage
RF input AC coupled
[1] -0.5
+5.0
V
VI(CTRL)
input voltage on pin CTRL
VI(CTRL) < VCC + 0.6 V
[1][2] -0.5
+5.0
V
VI(RF_IN)
input voltage on pin RF_IN
DC, VI(RF_IN) < VCC + 0.6 V
[1][2] -0.5
+5.0
V
VI(RF_OUT)
input voltage on pin RF_OUT
DC, VI(RF_OUT) < VCC + 0.6 V
[1][2][3] -0.5
+5.0
V
Pi
input power
[1] -
26
dBm
Ptot
total power dissipation
Tsp ≤ 130 °C
-
55
mW
Tstg
storage temperature
-65
+150
°C
Tj
junction temperature
-
150
°C
Human Body Model (HBM) according to
ANSI/ESDA/JEDEC standard JS-001
-
±2
kV
VESD
electrostatic discharge voltage
Charged Device Model (CDM) according to
JEDEC standard JESD22-C101C
-
±1
kV
[1]
Stresses with pulses of 1 s in duration. VCC connected to a power supply of 2.8 V with 500 mA current limit.
[2]
Warning: Due to internal ESD diode protection, to avoid excess current, the applied DC voltage must not exceed VCC + 0.6 V or 5.0 V.
[3]
The RF input and RF output are AC coupled through internal DC blocking capacitors.
10 Recommended operating conditions
Table 6. Operating conditions
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCC
supply voltage
1.5
-
3.1
V
Tamb
ambient temperature
-40
+25
+85
°C
bypass mode
-
-
0.3
V
VI(CTRL)
input voltage on pin CTRL
ON state
0.8
-
VCC
V
11 Thermal characteristics
Table 7. Thermal characteristics
Symbol
Parameter
Conditions
Typ
Unit
Rth(j-sp)
thermal resistance from junction to
solder point
225
K/W



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