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STP20N20 - STF20N20 - STD20N20

ELECTRICAL CHARACTERISTICS (CONTINUED)

Table 7: Dynamic

Table 8: Source Drain Diode

(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

(2) Pulse width limited by safe operating area.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Forward Transconductance

13

S

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

940

197

30

pF

pF

pF

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

(see Figure 17)

15

30

40

10

ns

ns

ns

ns

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

(see Figure 20)

28

5.6

14.5

39

nC

nC

nC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Source-drain Current

Source-drain Current (pulsed)

18

72

A

A

Forward On Voltage

1.6

V

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

(see Figure 18)

155

775

10

ns

nC

A

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

(see Figure 18)

183

1061

11.6

ns

nC

A