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STF20NM60D 데이터시트(PDF) 5 Page - STMicroelectronics

부품명 STF20NM60D
상세설명  N-CHANNEL 600V - 0.26ohm - 20A TO-220-TO-220FP-TO-247 FDmesh POWER MOSFET (with FAST DIODE)
PDF  15 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STF20NM60D 데이터시트(HTML) 5 Page - STMicroelectronics

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STF20NM60D - STP20NM60FD - STW20NM60FD
Electrical characteristics
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Table 6.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on delay time
Rise time
VDD = 300V, ID = 10A
RG =4.7Ω VGS = 10V
(see Figure 16)
25
12
ns
ns
tr(Voff)
tf
tc
Off-voltage rise time
Fall time
Cross-over time
VDD = 480 V, ID = 20A,
RG =4.7Ω, VGS = 10V
(see Figure 16)
8
22
30
ns
ns
ns
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min
Typ.
Max
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
20
80
A
A
VSD
(2)
2.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Forward on voltage
ISD = 20 A, VGS = 0
1.5
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 20 A, Tj = 25°C
di/dt =100A/µs,VDD=60V
(see Figure 21)
240
1800
16
ns
nC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 20 A, Tj = 150°C
di/dt =100A/µs,VDD=60V
(see Figure 21)
396
2960
20
ns
nC
A



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