| 전자부품 데이터시트 검색엔진 |
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S70GL02GP 데이터시트(PDF) 2 Page - Cypress Semiconductor |
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S70GL02GP 데이터시트(HTML) 2 Page - Cypress Semiconductor |
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2 / 11 page ![]() S70GL02GP Document Number: 002-01338 Rev. *D Page 2 of 11 Performance Characteristics Notes 1. Access times are dependent on VCC and VIO operating ranges. See Ordering Information on page 4 for further details. 2. Contact a sales representative for availability. Max. Read Access Times (ns)(Note 1) Parameter 2 Gb Random Access Time (tACC)110 Page Access Time (tPACC)25 CE# Access Time (tCE) 110 OE# Access Time (tOE) 25 Current Consumption (typical values) Random Access Read 30 mA 8-Word Page Read 1 mA Program/Erase 50 mA Standby 2 µA Program & Erase Times (typical values) Single Word Programming 60 µs Effective Write Buffer Programming (VCC) Per Word 15 µs Effective Write Buffer Programming (VACC) Per Word 15 µs Sector Erase Time (64 Kword Sector) 0.5 s |
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