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AP4936M 데이터시트(PDF) 1 Page - Advanced Power Technology |
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AP4936M 데이터시트(HTML) 1 Page - Advanced Power Technology |
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1 / 6 page ![]() Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ ▼ ▼ ▼ Low Gate Charge BVDSS 25V ▼ ▼ ▼ ▼ Simple Drive Requirement RDS(ON) 37mΩ ▼ ▼ ▼ ▼ Fast Switching ID 5.8A Description Absolute Maximum Ratings Symbol Units VDS V VGS V ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-amb Thermal Resistance Junction-ambient 3 Max. 62.5 ℃/W Data and specifications subject to change without notice 20020305 AP4936M Parameter Rating Drain-Source Voltage 25 Gate-Source Voltage Continuous Drain Current 3 5.8 Continuous Drain Current 3 4.6 Pulsed Drain Current 1 30 Total Power Dissipation 2 -55 to 150 Operating Junction Temperature Range -55 to 150 Linear Derating Factor 0.016 Thermal Data Parameter Storage Temperature Range The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. ± 20 S1 G1 S2 G2 D1 D1 D2 D2 SO-8 G2 D2 S2 G1 D1 S1 |
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