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3CD4C 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited

부품명 3CD4C
상세설명  isc Silicon PNP Power Transistor
PDF  2 Pages
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제조업체  ISC [Inchange Semiconductor Company Limited]
홈페이지  http://www.iscsemi.cn
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INCHANGE Semiconductor
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
1
isc Silicon PNP Power Transistor
3CD4C
DESCRIPTION
·
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min.)
·
DC Current Gain-
: hFE=10-180@IC= -1A
·
Collector-Emitter Saturation Voltage-
: VCE(sat)= -1.5V(Max)@ IC= -1A
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Power amplifier
·
Low speed switching
·
Power regulator
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-80
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-4
V
IC
Collector Current-Continuous
-2
A
PC
Collector Power Dissipation
@TC=75℃
20
W
TJ
Junction Temperature
-55~150
℃
Tstg
Storage Temperature
-55~150
℃


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