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25TTS12 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited |
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25TTS12 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 1 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors 25TTS12 APPLICATIONS · Typical applications are in input rectification (soft start) and these products are designed to be used with International Rectifier input diodes, switches and output rectifiers which are available in identical package outlines ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitive peak off-state voltage 1200 V VRRM Repetitive peak reverse voltage 1200 V IT(AV) Average on-stage current 16 A IRMS RMS on-state current 25 A ITSM Surge non-repetitive on-state current 300 A PG(AV) Average gate power dissipation 2.0 W Tj Operating junction temperature -40~125 ℃ Tstg Storage temperature -40~125 ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT IRRM Repetitive peak reverse current VRM=VRRM Tj=25℃ 0.5 mA Tj=125℃ 10 mA IDRM Repetitive peak off-state current VDM=VDRM Tj=25℃ 0.5 mA Tj=125℃ 10 mA VTM On-state voltage ITM= 16A 1.25 V IGT Gate-trigger current VD = 6 V 45 mA VGT Gate-trigger voltage VD = 6 V 2 V Rth(j-c) Thermal resistance Junction to case 1.5 ℃ /W |
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