| 전자부품 데이터시트 검색엔진 |
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ISCN1863P 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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ISCN1863P 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website: www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon PNP Power Transistor ISCN1863P ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA; IB= 0 -260 V VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A -2.0 V ICBO Collector Cutoff Current VCB= -260V; IE= 0 -100 μ A IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -100 μ A hFE DC Current Gain VCE= -4V; IC= -5A 40 140 hFE Classifications R O P 40-80 50-100 70-140 |
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