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IXTP26P10T 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IXTP26P10T 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 isc P-Channel MOSFET Transistor IXTP26P10T · FEATURES · Static drain-source on-resistance: RDS(on)≤90mΩ · Enhancement mode: · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · DESCRIPTION · High side switching · Push pull amplifiers · Current regulators · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -100 V VGS Gate-Source Voltage ± 15 V ID Drain Current-Continuous -26 A IDM Drain Current-Single Pulsed -80 A PD Total Dissipation @TC=25℃ 150 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(j-c) Channel-to-case thermal resistance 0.83 ℃ /W Rth(j-a) Channel-to-ambient thermal resistance 62 ℃ /W |
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