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N24RF64DTPT3G 데이터시트(PDF) 2 Page - ON Semiconductor

부품명 N24RF64DTPT3G
상세설명  Dual Interface RFID
PDF  21 Pages
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제조업체  ONSEMI [ON Semiconductor]
홈페이지  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

N24RF64DTPT3G 데이터시트(HTML) 2 Page - ON Semiconductor

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Figure 1. Functional Symbol
VCC
AN1
AN2
A0, A1
SCL
SDA
VSS
N24RF64
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameter
Rating
Unit
Storage Temperature
−65 to +150
_C
Ambient Operating Temperature
-4
0 to +105
_C
Voltage on SCL, SDA, A0, A1 and VCC pins with respect to Ground (Note 1)
−0.5 to 6.5
V
RF Input Voltage Peak to Peak Amplitude between AN1 and AN2, VSS pad floating
28
V
AC Voltage on AN1 or AN2 with respect to GND
-1 to 15
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. During transitions, the voltage undershoot on any pin should not exceed −1 V for more than 20 ns. Voltage overshoot on the SCL and SDA
I2C pins should not exceed the absolute maximum ratings, irrespective of VCC.
Table 2. RELIABILITY CHARACTERISTICS − EEPROM (Note 2)
Symbol
Parameter
Test Conditions
Max
Unit
NEND
Endurance
TA ≤ 25_C, 1.8 V < VCC < 5.5 V
2,000,000
Write Cycles (Note 3)
TA = 85_C, 1.8 V < VCC < 5.5 V
800,000
TA = 105_C, 1.8 V < VCC < 5.5 V
300,000
TDR
Data Retention
TA = 25_C
200
Year
2. Determined through qualification/characterization.
3. A Write Cycle refers to writing a Byte or a Page.



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