D8V0L1B2LP

Document number: DS39382 Rev. 1 - 2

2 of 5

www.diodes.com

May 2017

© Diodes Incorporated

D8V0L1B2LP

Characteristic

Symbol

Value

Unit

Conditions

Peak Pulse Power Dissipation

68

W

8/20µs, See Figure 3

Peak Pulse Current

4

A

8/20µs, See Figure 3

ESD Protection

– Contact Discharge

±25

kV

IEC 61000-4-2 Standard

ESD Protection

– Air Discharge

±25

kV

IEC 61000-4-2 Standard

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Package Power Dissipation (Note 5)

250

mW

Thermal Resistance, Junction to Ambient (Note 5)

500

°C/W

Operating and Storage Temperature Range

-65 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Reverse Standoff Voltage

—

—

8.0

V

—

Channel Leakage Current (Note 6)

—

—

100

nA

Clamping Voltage, IEC 61000-4-5

—



—

13.0

V

—

—

17.0

Breakdown Voltage

8.5

—

12

V

Dynamic Resistance

—

0.4

—

Ω

Channel Input Capacitance

—

8.5

—

pF

Notes:

5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on

Diodes Incorporated’s website at http://www.diodes.com/package-outlines.html.

6. Short duration pulse test used to minimize self-heating effect.