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2SC4635LS 데이터시트(PDF) 1 Page - Sanyo Semicon Device |
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2SC4635LS 데이터시트(HTML) 1 Page - Sanyo Semicon Device |
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1 / 3 page ![]() 2SC4635LS No.3704-1/3 Features • High breakdown voltage(VCEO min=1500V). • Small Cob(typical Cob=1.9pF). • Full-isolation package. • High reliability(Adoption of HVP process). Specifications Absolute Maximum Ratings at Ta=25 °C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1500 V Collector-to-Emitter Voltage VCEO 1500 V Emitter-to-Base Voltage VEBO 5V Collector Current IC 20 mA Collector Current (Pulse) ICP 60 mA Collector Dissipation PC 2W Junction Temperature Tj 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25 °C Ratings Parameter Symbol Conditions min typ max Unit Collector Cutoff Current ICBO VCB=1500V, IE=0 1 µA Emitter Cutoff Current IEBO VEB=4V, IC=0 1 µA DC Current Gain hFE VCE=5V, IC=600µA10 60 Gain-Bandwidth Product fT VCE=10V, IC=600µA 6 MHz Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Ordering number : ENN3704B 2SC4635LS 1500V / 20mA High-Voltage Amplifier, High-Voltage Switching Applications Package Dimensions unit : mm 2079D [2SC4635LS] 11502 TS IM TA-3427 / 11599 HA (KT) / 80296 YK (KOTO) TA-0465, AX-7506, 8-6926 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. NPN Triple Diffused Planar Silicon Transistor 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220FI(LS) 0.7 2.55 2.55 1.2 0.9 0.75 1.2 4.5 2.8 12 3 10.0 3.2 |
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