2SC4745 datasheet(1/4 Pages) HITACHI

부품명	2SC4745

상세설명	Charcater Display Horizontal Deflection Output

PDF	4 Pages

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제조업체	HITACHI [Hitachi Semiconductor]

홈페이지	http://www.renesas.com/eng

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Feature

• High speed switching

tf = 0.2 µs typ

• High breakdown voltage

VCBO = 1500 V

• Isolated package; TO-3PFM

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol Rating Unit

————————————————————–

Collector to base voltage

VCBO

1500

V

————————————————————–

Collector to emitter voltage

VCEO

800

V

————————————————————–

Emitter to base voltage

VEBO

6V

————————————————————–

Collector current

IC

6A

————————————————————–

Collector peak current

iC(peak) 7A

————————————————————–

Collector surge current

iC(surge) 16

A

————————————————————–

Collector power dissipation

PC*1

50

W

————————————————————–

Junction temperature

Tj

150

°C

————————————————————–

Storage temperature

Tstg

–55 to °C

+150

————————————————————–

Note: 1. Value at TC = 25°C.

1 2

3

TO-3PFM

1. Base

2. Collector

3. Emitter

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test condition

———————————————————————————————————————————

Collector to emitter breakdown voltage

V(BR)CEO 800

—

V

IC = 10 mA, RBE = ∞

———————————————————————————————————————————

Emitter to base breakdown voltage

V(BR)EBO 6

——V

IE = 10 mA, IC = 0

———————————————————————————————————————————

Collector cutoff current

ICES

—

500

µA

VCE = 1500 V, RBE = 0

———————————————————————————————————————————

DC current transfer ratio

hFE

7

—

30

VCE = 5 V, IC = 1 A

———————————————————————————————————————————

Collector to emitter saturation voltage

VCE(sat)

——5

V

IC = 5 A, IB = 1 A

———————————————————————————————————————————

Base to emitter saturation voltage

VBE(sat)

—

1.5

V

IC = 5 A, IB = 1 A

———————————————————————————————————————————

2SC4745

Silicon NPN Triple Diffused

Character Display Horizontal Deflection Output

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2SC4745 데이터시트(PDF) 1 Page - Hitachi Semiconductor

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