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20130822a

IXBOD2

IXYS reserves the right to change limits, test conditions and dimensions.

Data according ot IEC 60747 and per semiconductor unless otherwise specified

BOD2

Ratings

Symbol

Definitions

Conditions

min.

typ.

max.

I

D

drain current

V

T

25°C

T

10

200

µA

µA

V

BO

breakover voltage

V

V

I

RMS

RMS current

f = 50 Hz

T

pins soldered to printed circuit (conductor 0.035x2mm)

1.4

A

I

FAVM

maximum average forward current

0.9

A

I

SM

maximum pulsed source current

t

T

250

A

t

T

3.1

K

T

K

P

temperature coefficient of V

BO

coefficient for energy per pulse EP (material constant)

0.7

700

K/Ws

R

thJA

thermal resistance junction to ambient

natural convection

with air speed 2 m/s

60

45

K/W

K/W

I

BO

breakover current

T

25°C

T

15

6

mA

mA

I

H

holding current

T

25°C

T

20

12

mA

mA

V

H

holding voltage

T

25°C

4

8

V

(dv/dt)

cr

critical rate of rise of voltage

V

T

25°C

T

3000

1000

V/µs

V/µs

(di/dt)

cr

critical rate of rise of curent

I

T

I

200

500

A/µs

A/µs

t

q

turn-off time

V

T

dv/dt

200

µs

V

T

forward voltage drop

I

T

T

1.3

1.2

V

V

V

T0

r

T

threshold voltage

slope resistance

for power-loss calculation only

T

0.75

0.05

V

W

V

d

68 k

W

400 nH

IXBOD

100 nF

I