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FCD2250N80Z 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited |
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FCD2250N80Z 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor FCD2250N80Z · FEATURES · With TO-252(DPAK) packaging · UIS capability · High speed switching · Easy to use · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operationz · APPLICATIONS · Switching applications · AD-AC power supply · LED lighting · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGSS Gate-Source Voltage ± 20 V ID Drain Current-Continuous@Tc=25℃ Tc=100℃ 2.6 1.7 A IDM Drain Current-Single Pulsed 6.5 A PD Total Dissipation 39 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 3.2 ℃ /W Rth(ch-a) Channel-to-ambient thermal resistance 100 ℃ /W |
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